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Performance Optimization of a Low Noise Amplifier

机译:低噪声放大器的性能优化

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This work presents potential performance optimization techniques that can be applied to an RF CMOS low noise amplifier (LNA). LNA noise optimization methods namely the Conjugate Noise Match (CNM), the Simultaneous Noise and Input Matching (SNIM), the Power Constrained Noise Optimization (PCNO) and the Power Constrained Simultaneous Noise and Input Matching (PCSNIM) are introduced and discussed. Through detailed analysis and review, it has been realized that the PCSNIM technique implies to be the best method in optimizing the noise performance of the LNA. The gain enhancement technique is another technique that is introduced in this work where positive feedback is employed to reduce the total conductance of the circuit and subsequently boosting the gain performance of the design. This work will also show how the amount of the gain enhancement technique is governed by stability considerations. Substrate biasing is additionally recommended to further boost the performance of the LNA so that the device employed can work more efficiently at low power voltage. To implement the forward body-biased NMOS scheme, a deep N-well process is needed, which can provide separate body region for the transistor. To demonstrate the above suggested optimization techniques, a fully-integrated narrow-band source degenerated cascode RF LNA that dissipates 19.89 mW from a 0.9 V power supply is designed and simulated using Cadence Virtuoso and Cadence's Analog Design Environment respectively, based on a 0.18 μm RF-CMOS process. The layout of the LNA is additionally presented at the end section of this paper.
机译:该工作介绍了可以应用于RF CMOS低噪声放大器(LNA)的潜在性能优化技术。 LNA噪声优化方法即缀合物噪声匹配(CNM),介绍并讨论了电力受限噪声优化(PCNO)和功率受限同时噪声和输入匹配(PCSNIM)。通过详细的分析和审查,已经意识到PCSNIM技术意味着优化LNA噪声性能的最佳方法。增益增强技术是在该工作中引入的另一种技术,其中采用正反馈来降低电路的总电导,随后提高设计的增益性能。这项工作还将展示增益增强技术的数量如何受到稳定考虑因素的管辖。另外建议使用基板偏置以进一步提高LNA的性能,使得所用的装置可以在低功率电压下更有效地工作。为了实现前方体偏置的NMOS方案,需要深度N阱过程,其可以为晶体管提供单独的体区域。为了证明上述建议的优化技术,一种全集成的窄带源退化的CARCODE RF LNA,其分别根据0.18μm的射频设计和模拟了0.9V电源的19.89mW。 -CMOS过程。另外在本文的端部呈现LNA的布局。

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