A New Wide-band Low-voltage Low-noise Amplifier with Gain Boosted and Noise Optimized Techniques

摘要

This work develops a new CMOS wide-band low-voltage low-noise amplifier (LNA). The proposed LNA uses negative feedback and gain boosted technique to increase its high-frequency gain to achieve high gain and wide bandwidth simultaneously. The proposed LNA uses mirror bias technique to achieve full output swing, and its operating current does not change due to changes in the supply voltage. The two-stage structure can improve the gain flatness, high gain, and low noise figure. Therefore, the developed LNA provides high gain, low noise, wide bandwidth, and good gain flatness performance. The operating bandwidth of the proposed LNA is between 1.5 and 3.5 GHz. The measured gain of the LNA is higher than 15 dB, the measured input third-order intercept points (IIP3) is -7 dBm, the noise figure of the proposed LNA is less than 4.2 dB, and the power dissipations of the LNA is 8 mW at 1 V supply voltage. The proposed LNA is implemented in a Taiwan Semiconductor Manufacturing Company 0.18-mu m RF CMOS process. The chip area is 0.28 mm(2).