Low-power inductorless widebandSFBBbalun low noise amplifier with noise reduction and third-order transconductance optimization

摘要

This article presents an inductorless wideband balun low noise amplifier (LNA), which uses noise reduction and linearity optimization techniques at low supply voltages. The proposed self forward body biased LNA uses inverter type amplifier structure as input stage for impedance matching while output stages are noise reduction stages, which partially cancel the noise of the input stage. In addition to noise reduction, transistors are biased near-zero third-order transconductance region to maximize third-order input-referred intercept point (IIP3) performance at low supply voltages. The LNA, implemented in 180 nm RFCMOS technology, is evaluated at 1 and 0.9 V supply voltages to show low voltage operation. It shows a maximum voltage gain of 19.7 dB with a minimum noise figure of 2.7 dB and a maximum 3-dB bandwidth that spans from 300 MHz to 1.83 GHz. The minimum achieved IIP3 at 0.9 V supply voltage is -1.7 dBm. The circuit draws a maximum current of 10.36 mA from 1 V power supply and occupies an area of 0.08 mm(2).