Cascoded cmos low noise transconductance amplifier with enhanced noise and gain performance

摘要

A cascode CMOS low-noise, low power, linear transconductance amplifier having good stability over intended range of radio frequency is generally described herein. Other embodiment(s) may be described and claimed. In an embodiment, a cascode gain stage including a first NMOS transistor configured to operate in common source configuration, receive radio frequency input signal for amplification. In an exemplary embodiment, the low noise transconductance amplifier comprises a common source NMOS transistor and a common gate NMOS transistor which is coupled to an output node. The cascode amplifier may include integrated filter(s) to attenuate undesired signal(s). The input matching network is coupled with gate of first common source NMOS transistor which is cascoded with second NMOS transistor to enhance amplifier gain. The cascode amplifier may be biased and designed in such a way to produce linear output current to avoid current compression or excessive current expansion. In other embodiment, a PMOS transistor together with NMOS transistor forms a complementary metal oxide semiconductor ("CMOS") structure, which facilitate(s) noise & distortion reduction, which is essential feature of front end circuit used in wireless communication receiver. In some embodiment, the resonant trap(s) are used at the output of first transistor to attenuate noise thereby increasing overall system efficiency. In another embodiment, a single to dual converter ("SDC") is designed for signal conversion that may be required for mixer element of wireless receivers.