High-Gain Wideband CMOS Low Noise Amplifier with Two-Stage Cascode and Simplified Chebyshev Filter

摘要

An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-μm CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power. The Proposed UWB LNA achieves a measured power-gain bandwidth product of399.4 GHz.