Optimized Fabrication Process of PZT Thin Film Capacitor for MMIC Applications

摘要

This paper reports on the optimization of fabrication process of PZT thin film capacitor for monolithic microwave integrated circuit (MMIC) applications. PZT thin film is used as a dielectric in the capacitor design with the aim to achieve miniaturized structures. In this work, the fabrication processes involved are optimized including exposure parameter, etching composition and metallization. The results reported here show the feasibility of using this new material in MMICs. Typical capacitance values measured at microwave frequencies are presented here.