Characteristics of novel titanium oxide thin film used for nonvolatile memories

摘要

With the physical method of depositing TiO2 thin films, the bipolar resistive switching phenomenon is observed. We find that I-V curve in oxygen-filled sample is less symmetric than in the oxygen-unfilled. The conduction behavior is dominated by Ohmic behavior in the LRS and SCLC in the HRS, which proves that there is a negative resistive in the transition from LRS to HRS. The Pt/titania/Pt cell can find its application to the NVMS.