Study of Antistatic Properties of TiO_2:Tb and TiO_2:(Tb,Pd) Thin Films Obtained by Magnetron Sputtering Process

摘要

Static electricity arises when two materials in contact are separated after rubbing and the speed of charge movement on surface is slow. Retained electrostatic charge can cause problems in many areas. Therefore it is very important to develop antistatic materials that would be suitable to avoid electrostatic discharges. In practise materials become charged by tribocharging. Comparable results can be obtained with corona charging. The ability of materials to dissipate static electricity was measured using a JCI 155v5 Charge Decay Test Unit. Fast response electrostatic fieldmeter measured how quickly deposited charge migrated away from the surface. Quantity of charge was measured using JCI 176 Charge Measuring Sample Support. The JCI 191 Controlled Humidity Test Chamber was used to provide measurements under defined conditions of temperature and humidity. Present work is concentrating on TiO_2 thin films doped with various amount of Tb in comparison to undoped TiO_2 and TiO_2 doped with Pd and Tb. Thin oxide films were deposited on silica and silicon substrates by magnetron sputtering method. Antistatic properties of prepared structures were examined by Method of Antistatic Measurements (MAM). Measurements were performed with a JCI 155v5 Charge Decay Test Unit in JCI Controlled Humidity Test Chamber that provides measurements under defined atmospheric conditions.