Dielectric Loss at Millimeter Range and Temperatures 300-950 K, and Electrophysical Properties in Diamonds Grown by the Arc Plasma Jet Technology

摘要

The results of study of the dielectric loss at millimeter (MM) wavelengths range and temperatures 300-950 K in two different diamonds grown by the arc plasma jet (APJ) technology are presented. The electrophysical properties and parameters of point defects are also investigated. A comparison of results was made for these samples with the diamonds which have been grown by the technology of microwave plasma chemical vapor deposition (MPCVD). It is revealed that both frequency and temperature loss dependences as well as the electrophysical properties and parameters of point defects in the APJ diamonds essentially differ from the MPCVD diamonds properties. Also these properties in the studied APJ diamonds also essentially differ. The dielectric loss mechanisms are discussed.