A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs

摘要

An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson's equation in the cylindric surrounding-gate (SRG) MOSFETs, a single set of the analytic drain current expression in terms of the surface potential evaluated at the source and drain ends is obtasined from the Pao-Sah's dual integral without the charge-sheet approximation. It is shown that the derived drain current model is valid for all operation regions, allowing the SRG MOSFET characteristics to be adequately described from the linear to saturation and from the sub-threshold to strong inversion region without fitting ■ parameters, Moreover, the model prediction is also be verified by the 3-D numerical simulation.