Plasmon-plasmon scattering in two-dimensional electron channel of a terahertz nanotransistor

摘要

We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon inter-mode scattering. The results allow to interpret recent experimental results of resonant THz detection by InGaAs nanotransistors. The physics of the plasmon-plasmon inter-mode scattering is discussed compared to the other possible plasmon damping mechanisms.