Plasmon-Plasmon Scattering and Giant Broadening of the Gated Plasmon Resonance Line in a Nanometric Heterotransistor with a 2D Electron Channel

摘要

The shape of the gated plasmon resonance absorption line in a field-effect heterotransistor with a remote InGaAs/InAlAs gate has been calculated. It is shown that the experimentally observed giant broadening of the plasmon resonance linewidth is caused by the effect of intermodal plasmon–plasmon scattering.