CMOS-Compatible Zero-Mask One Time Programmable (OTP) Memory Design

摘要

A method to design CMOS-compatible diode-based One-Time Programmable (OTP) memory is discussed in this paper. In particular the program disturb problem is resolved by using diode drivers with sufficiently high breakdown voltage. The choices of memory elements and various available diodes in a standard CMOS process are carefully studied to obtain an optimal combination. Different memory cells were fabricated in standard 0.18-μm CMOS technology to verify the functionality of the design.