A study of advanced modeling methodology of CMOS-compatible RF-MEMS devices for integrated circuit design

摘要

With the rapid development of CMOS-compatible MEMS technology, it has been used to improve the performance of monolithic integrated RF circuits. To take advantages of the MEMS devices in RF circuits, accurate models are needed, with the considerations of important effects that impact the electrical behavior of the devices. In this paper, we explore the modeling methodology for CMOS-compatible MEMS inductors, which are fabricated with two different process approaches. Based on device simulation results for mechanical and electrical behavior, we propose a SPICE-like model for CMOS-compatible RF-MEMS inductors used for integrated circuit design.