Wide modal gain spectra in the asymmetric multiple-quantum-well heterostructures Ga0.47In0.53As-Ga0.18In0.82As0.4P0.6

摘要

For asymmetric multiple-quantum-well heterostructures based on Ga0.47In0.53As-Ga0.18In0.82As0.4P0.6 compounds, the detailed theoretical analysis of modal gain spectra is carried out in the framework of the four-band kp-method. Effective procedure of obtaining the wide and practically flat modal gain spectrum is offered. Various designs of the semiconductor sources with different sets of non-uniform excited quantum wells, giving a wide gain spectrum in the 1.28–1.6 μm ranges, are calculated.