Work function variation of ITO according to oxygen partial pressure and its application to HIT solar cell

摘要

The work function at the ITO/p-a-Si:H interface is one of the most important factors limiting the performances of HIT solar cells. In order to study this effect, the property of ITO single layer which is deposited in only Ar atmosphere and the one deposited in Ar and tiny oxygen content in it were investigated. And the property of HIT solar cell where this ITO single layer is applied is also analyzed..