MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AIN buffer

摘要

High quality GaN films were successfully grown on Si (111) substrates using the MOVPE method and a multilayer AIN buffer. The buffer layer film quality and thickness are critical for the growth of the crack-free GaN film on Si (111) sub-strates. Cracks started to form on the single layer high tem-perature (HT) AIN film grown on Si (111) substrate as the AIN thickness was greater than 20 nm. However, a 100 nm crack-free AIN film can be obtained when multilayer buffer of HT-AIN/low temperature (LT)-AIN/HT-AIN was grown on the Si (111) substrate. By using multi layer AIN buffer, a 2 pm crack-free GaN film was successful grown on the 2" Si (111) substrate. Moreover, the GaN film (2μm thick) grown on Si with a GaN (004) Mosaic FWHM of only 0.12°.