A large number of power cycling data from different IGBT module generations and test conditions have been evaluated. Multiple regression with respect to the variables temperature swing ΔT{sub}J, T{sub}J, power-on-time (t{sub}(on)), chip thickness, bonding technology, diameter (D) of bonding wire, current per wire bond (I) and package type was performed. It provided parameters for a new empirical model describing number of power cycles (N{sub}f) in relation to these variables. For a fixed module technology and blocking voltage class, the set of variables have been restricted to ΔT{sub}J, T{sub}J, t{sub}(on) and I as the factors influencing the number of cycles to failure. The model is used to estimate the power cycling capability for the new generation of 1200V-IGBT4 Modules, which are rated up to a junction temperature of 150°C in operation.
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