Genetic Algorithm and Semiconductor Device Model Parameter Extraction

摘要

In this paper, a novel method based on hybrid genetic algorithm (GA) was developed to extract parameters of analytical or part-analytical models. It needn't complex computation compared with conventional methods or other compound genetic algorithm. With a simple input file and opening model codes, it was easy to be modified for other models. Using this method, parameters of BSIMPD MOSFET threshold voltage were extracted, the simulation result with this method agrees well with the experimental result