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Optical properties of indium sulphide thin films deposited by thermal evaporation

机译:热蒸发沉积硫化铟薄膜的光学性质

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Indium sulphide (In2S3) thin films were deposited by vacuum thermal evaporation a base pressure of 1.5×10−5 mbar. The structural and optical properties of these films are studied by X-ray diffraction, X-ray reflectometry and optical transmission in the UV-Visible-Near infrared region. X-ray diffraction analysis showed that the as-deposited In2S3 films are amorphous. The measured optical transmission enabled the determination of the thicknesses and optical constants of the films in a wavelength range 200 to 2500 nm. The optical transmittance of as-deposited films varied on average between 80 and 90% in the visible spectral range. The analysis of the optical absorption of these thin films showed that they have a direct band gap which varies between 1.65 eV and 2.13 eV depending on the film thickness. Fourier transform infrared spectroscopy analysis was also carried out and the results will be presented and discussed.
机译:通过真空热蒸发沉积硫化铟(在 2 S 3 )薄膜1.5×10 -5毫巴的基础压力。通过X射线衍射,X射线反射测量法和UV可见近红外区域中的光传输研究了这些膜的结构和光学性质。 X射线衍射分析表明,在 2 S 3 膜中的沉积物是无定形的。测量的光学传输使得在波长范围200至2500nm中确定膜的厚度和光学常数的确定。沉积膜的光学透射率在可见光谱范围内平均为80至90%。这些薄膜的光学吸收的分析表明,它们具有直接带隙,其根据膜厚度在1.65eV和2.13eV之间变化。还进行了傅里叶变换红外光谱分析,结果将呈现和讨论。

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