Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure

摘要

Intrinsic hydrogenated amorphous silicon films were deposited by the DC saddle field system on crystalline silicon wafers. The transport parameters of the amorphous-crystalline silicon heterostmctures were evaluated by Photocarrier Radiometric (PCR) lifetime measurements,. We present the influence of surface pie-treatments on the interface passivation and determine that the standard wafer cleaning treatment SPM/SC1/SC2 yields the highest effective lifetime.