Photocarrier radiometric characterization of semiconductor silicon wafers.

摘要

As semiconductor devices become increasingly complex, and consequently increasingly expensive to produce, the necessity to improve yield in order to maintain profitability is continuously driving industrial manufacturers to search for more effective characterization tools. Photothermal techniques have been developed over the last several decades as a viable characterization tool for electronic materials. However, they are in general sensitive to both thermal-wave and carrier-density-wave processes in an optically excited semiconductor and these two competing signal generation mechanisms can result in compromised computational accuracy and potential ambiguity of lateral imaging of the electronic properties of a material.; In this thesis photocarrier radiometry (PCR), a form of spectrally-integrated modulated room-temperature near-infrared photoluminescence, is presented as a novel non-destructive diagnostic technique for non-contact characterization of semiconductor materials. The signal generation mechanism for PCR is the IR emission and self-reabsorption of IR photons emitted by recombining photogenerated carriers created by an intensity modulated super-bandgap optical source. The IR emission intensity is proportional to the integrated carrier density profile in the sample which is modified by enhanced recombination at defects. The developed technique is utilized for the quantitative determination of the electronic transport parameters, namely recombination lifetime, diffusivity, and surface recombination velocity, and has been applied to the study of two industrially relevant characterization issues, ion implantation dose uniformity monitoring and contamination/defect imaging. The direct correlation between contamination and carrier lifetime in Si allows for generation of contamination/defect concentration images by laterally scanning the sample. The signal dependence of the PCR signal on ion implant dose in silicon is established over a broad range of industrially relevant doses. The modification of the physical structure, and the corresponding change in the electrical and optical properties of the material during ion implantation, is used to develop a model for the optoelectronic response of an ion implanted semiconductor. In addition, a two beam cross-modulation technique is developed and shown to enhance imaging contrast and resolution and to have potential application for low injection level defect imaging.; In summary, a semiconductor characterization technique with multiple applications to industrially relevant metrology issues has been developed and is presented in this work.