首页> 外国专利> PRETREATMENT METHOD OF RECOMBINATION LIFETIME MEASUREMENT OF SILICON SUBSTRATE, RECOMBINATION LIFETIME MEASUREMENT METHOD OF SILICON SUBSTRATE, AND PASSIVATION METHOD OF SILICON SUBSTRATE

PRETREATMENT METHOD OF RECOMBINATION LIFETIME MEASUREMENT OF SILICON SUBSTRATE, RECOMBINATION LIFETIME MEASUREMENT METHOD OF SILICON SUBSTRATE, AND PASSIVATION METHOD OF SILICON SUBSTRATE

机译:硅基质的重组寿命测定的预处理方法,硅基质的重组寿命测定的方法以及硅基质的钝化方法

摘要

PROBLEM TO BE SOLVED: To provide a pretreatment method which allows for pretreatment in a water soluble environment, and ensures highly reliable measured values when measuring the recombination lifetime for a silicon substrate thus treated.;SOLUTION: In a pretreatment method performed before measuring the recombination lifetime of a silicon substrate, the surface of the silicon substrate is subjected to passivation, by immersing the silicon substrate in ascorbic acid solution.;SELECTED DRAWING: None;COPYRIGHT: (C)2016,JPO&INPIT
机译:要解决的问题:提供一种预处理方法,该方法允许在水溶性环境中进行预处理,并在测量如此处理的硅基板的复合寿命时确保高度可靠的测量值。解决方案:在测量重组之前执行的预处理方法中在硅基板的使用寿命中,通过将硅基板浸入抗坏血酸溶液中对硅基板的表面进行钝化处理;选定图稿:无;版权:(C)2016,JPO&INPIT

著录项

  • 公开/公告号JP2016046468A

    专利类型

  • 公开/公告日2016-04-04

    原文格式PDF

  • 申请/专利权人 SHIN ETSU HANDOTAI CO LTD;

    申请/专利号JP20140171621

  • 发明设计人 OTSUKI TAKESHI;

    申请日2014-08-26

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 14:43:32

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