Pretreatment method of the recombination lifetime measurements of a silicon substrate

摘要

PROBLEM TO BE SOLVED: To enable highly reliable measurement when performing pretreatment for forming an oxide film at 950 to 1,050°C by using a vertical heat treatment furnace before measuring recombination life time of a silicon wafer.;SOLUTION: After an oxide film is formed, the temperature of an inside of a heat treating furnace is lowered to 650°C, for example, under inert gas atmosphere and thereafter a wafer is unloaded. Thereby, slippage of a wafer with even a diameter as large as 12 inches, can be restrained. It is also possible to restrain the dispersion in the measurement values of a recombination life time by supplying oxygen gas into a heat treating furnace at least during carrying out of a wafer boat from a heat treating furnace.;COPYRIGHT: (C)2000,JPO