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Strategies at the End of CMOS Scaling

机译:CMOS缩放结束时的策略

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Throughout the latter third of the 206 century Moore's Law has ruled the growthof the semiconductor industry. This astounding exponential growth at acompound rate of 40% per year over 40 years has been the product of higherpacking densities and larger chip sizes, where the higher packing densities havebeen achieved both by finer lithography patterning as well as by innovative self-aligned device structures. The non-lithographic contribution has been verysubstantial, since while feature sizes have been reduced by a factor of —102 duringthis time, circuit count has increased by a factor of —108. For the past decade orso, Moore's law has been codified as the SIA (Semiconductor IndustryAssociation) or, more recently, ITRS (International Technology Roadmap forSemiconductors) roadmaps. In these roadmaps, detailed goals are set forth, fromdevice structural parameters to system performance, for both memory and logic.For all of this time the silicon MOSFET has been the dominant device used inintegrated logic and memory chips, and for the past twenty years, complementaryMOS (CMOS) has been the dominant circuit type.
机译:在206世纪的后三分之一的摩尔定律中统治了半导体行业的增长。这种令人震惊的指数增长在每年40%以上的40%以上的额度是更高的密度和更大的芯片尺寸的产物,其中已经通过更精细的光刻图案化以及创新的自对准装置结构来实现更高的填充密度。非光刻贡献已经非常高,因为在此期间特征尺寸减小了-102的因子,电路计数增加了-108的因子。在过去的十年探索中,摩尔定律已被编纂为SIA(半导体IndustryAssociation),或者最近,ITRS(国际技术路线图)路线图。在这些路线图中,对于存储器和逻辑,阐述了详细的目标,从Device参数到系统性能,从而实现了硅MOSFET的所有硅MOSFET inclestation逻辑和内存芯片,而且在过去二十年中都是硅MOSFET。互补摩尔(CMOS)一直是主导电路类型。

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