Long Wavelength Quantum Dot Lasers:From Promising to Unbeatable

摘要

Edge-emitting GaAs-based quantum dot (QD) lasers operating at 1.3 pun arerealized with properties close to those for the best quantum well devices on InPsubstrates, giving the advantage of better cost efficiency. Maximum continuouswave (CW) output powers of 3 W (multimode) and 330 mW (single transversemode) are realized at a heat sink temperature of 20 °C. GaAs-based QD vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 also are fabricated.Continuous wave output power of 0.8 mW (25 °C) has been realized. ExtendedCW operation lifetimes at 35-°C heat-sink temperature (>700 hours) aredemonstrated for laboratory VCSEL technology. Maximum differential efficiencyis above 60% and the maximum wall-plug efficiency is about 20%. Goodprospects exist for shifting the wavelength of QD lasers towards the 1.5-1.6 pi.mrange.