Boron-doped diamond (BDD) ultramicroelectrodes (UMEs) were fabricated by three methods: (1) CVD deposition of microcrystalline BDD onto sharpened tungsten wires; (2) CVD deposition of nanocrystalline BDD by bias-enhanced growth onto sharpened tungsten wires and (3) selective insulation of BDD 'splinters' formed by breaking a larger BDD electrode. The first two methods produced very sharp, coated wires that could be insulated using a variety of techniques, including nail varnish, electrophoretic paint and epoxy. Good control over exposed electrode size and geometry were achieved and UME electrochemical behavior was observed. The 'splinter' electrodes formed were also of microelectrode dimensions and although there was less control over electrode geometry they were more robust and performed better in the presence of certain redox mediators.
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