High Resolution X-ray Diffraction For In-line Monitoring Of Ge MOSFET Devices

摘要

Differences in the relaxation of the Ge layer deposited on the SiGe buffer layer has been observed across and along the trenches, with uniaxial strain along the fins and with the magnitude of the relaxation across the fins being dependant on the width of the trenches, which is preferred for device performance. In addition, the epilayer quality can be influenced by process conditions, and monitored using HRXRD.