Reference-free, Depth-dependent Characterization Of Nanoscaled Materials Using A Combined Grazing Incidence X-ray Fluorescence And X-ray Reflectometry Approach

摘要

The accurate in-depth characterization of nanoscaled layer systems is of importance for current developments in many fields of materials research. Thin high-κ layers, gate stacks and ultra-shallow dopant profiles involving many different chemical elements are technologically relevant for current and future electronic devices. The reliable characterization of such systems presents several metrological challenges and requires further development of the available analytical techniques. Furthermore, quantitative analysis usually relies on nanoscaled reference materials or calibration samples of sufficient quality and equality with respect to the actual analytical problem.