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Current Status of CDSAXS: Is it Fab-Ready?

机译:CDSAXS的当前状态:它准备好了吗?

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The semiconductor industry continues to follow Moore's Law with continuously shrinking device dimension sizes. The 14 nm node is now in production and the 10 nm node is rapidly under development. In addition to the substantial challenges of simply fabricating these tiny structures, the current suite of metrology tools are also running against fundamental limits. Current production fabs use optical scatterometry (OCD) for dimensional metrology to track the size and shape of their tiny nanostructures. The three dimensional nature of the latest finFET devices and shrinking sizes result in parameter correlations and size dependent refractive index. Critical dimension small angle X-ray scattering (CDSAXS) is a potential replacement metrology tool that uses X-rays instead of the visible and ultraviolet light used in OCD. The much smaller wavelength of X-rays results in a much smaller diffractive resolution limit. CDSAXS is a variable angle, transmission SAXS measurement where the X-rays go through the entire wafer. It is essentially single crystal diffraction where the lattice is the periodic grating and the individual lines/vias/posts are the atoms. The scattering pattern is solved to determine the size and shape of the periodic features that created it. CDSAXS results in an ensemble average structure and is not sensitive to low concentration defects. Most reported measurements of CDSAXS were done at a synchrotron to take advantage of the much higher X-ray flux. Moving CDSAXS to the laboratory or fab will require the development of new high brightness, compact X-ray sources. Current compact X-ray sources do not have sufficient brightness for a high throughput measurement. The following section will discuss the current status of CDSAXS and discuss the prospects for higher brightness X-ray sources. We will also discuss the required performance metrics for an X-ray source to provide sufficient resolution in a short enough time. Synchrotron measurements have demonstrated that CDSAXS fundamentally works, the primary limitation is getting enough photons from a compact source to make it a high throughput measurement.
机译:半导体行业继续遵循摩尔定律,连续收缩装置尺寸尺寸尺寸。现在,14个NM节点在生产中,并且在开发中迅速下达10 nm节点。除了简单地制造这些微小结构的大量挑战外,目前的计量工具套件也在抵抗基本限制。电流生产FAB使用光散射测定法(OCD)进行尺寸计量,以跟踪其微小纳米结构的尺寸和形状。最新的FinFET设备的三维性质和缩小尺寸导致参数相关性和尺寸相关折射率。临界尺寸小角度X射线散射(CDSAX)是一种潜在的替代计量工具,它使用X射线而不是OCD中使用的可见和紫外线。 X射线的较小波长导致较小的衍射分辨率极限。 CDSAX是一种可变角度,传输窗口测量,其中X射线通过整个晶片。它基本上是单晶衍射,其中晶格是周期光栅,并且各个线/通孔/柱是原子。解决散射模式以确定创建它的周期性特征的大小和形状。 CDSaxS导致集合平均结构,对低浓度缺陷不敏感。大多数报道的CDSAX测量是在一个同步rotron完成的,以利用更高的X射线通量。将CDSaxS移动到实验室或Fab将需要开发新的高亮度,紧凑型X射线源。当前的紧凑型X射线源没有足够的亮度以进行高吞吐量测量。以下部分将讨论CDSAX的当前状态,并讨论更高亮度X射线源的前景。我们还将讨论X射线源所需的性能指标,以便在短时间内提供足够的分辨率。同步测量已经证明CDSAXS从根本上起作用,初级限制是从紧凑源获得足够的光子,使其成为高吞吐量测量。

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