Investigations of 驴-Doped Inx, Al1-xAs/InyGa1-yAs MHEMTs Characteristics with Different Channel Compositions

摘要

This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.