首页> 外文会议>International Copper-Cobre Conference >OPTIMIZATION OF THE TECHNOLOGICAL PARAMETERS FOR THE COPPER ELECTROREFINING USING INTERFERENCE MICROSCOPY AND DIGITAL IMAGE ANALYSI
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OPTIMIZATION OF THE TECHNOLOGICAL PARAMETERS FOR THE COPPER ELECTROREFINING USING INTERFERENCE MICROSCOPY AND DIGITAL IMAGE ANALYSI

机译:干扰显微镜和数码图像分析的铜电子技术参数优化

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Short term electrodeposition experiments (up to 80 min.) at two current densities 220 and 275 A/m~2 with varying concentrations of thiourea and glue were performed to determine the optimum levels of glue, thiourea and current density for industrial copper electrorefining. White Light Interference Microscopy was used to acquire digital images of the morphology of the electrodeposited copper. Scaling analysis was employed to parameterize the morphological information encoded in the images. The limiting roughness, *, the critical scaling length, L_c, and the aspect ratio, 4*/ L_c, were determined as a function of the deposition time and the amount of organic additives. These parameters were used to calculate the dynamic exponent, beta, the roughness exponent, 1/z, and the aspect ratio exponent, y, plotted as a function of glue and thiourea concentrations. These 3D plots allowed us to find conditions corresponding to the minimum of beta and y, at which the deposited copper is characterized by a small roughness and a dense structure.
机译:进行短期电沉积实验(高达80分钟),在两个电流密度220和275a / m〜2,进行不同浓度的硫脲和胶水,以确定工业铜电气的最佳胶水,硫脲和电流密度。白光干扰显微镜用于获取电沉积铜形态的数字图像。采用缩放分析来参数化图像中编码的形态信息。限制粗糙度,*,临界缩放长度,L_c和纵横比,4 * / l_c,被确定为沉积时间和有机添加剂量的函数。这些参数用于计算动态指数,β,粗糙度指数,1 / z和纵横比指数Y,作为胶水和硫脲浓度的函数绘制。这些3D图允许我们找到与β和Y的最小值相对应的条件,其中沉积的铜的特征在于小粗糙度和致密结构。

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