首页> 外文会议>NATO Advanced Study Research Workshop on Symmetry and Heterogeneity in High Temperature Superconductors >ANISOTROPY OF THE CRITICAL CURRENT DENSITY IN HIGH QUALITY YBa_2Cu_3O_(7-δ) THIN FILM
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ANISOTROPY OF THE CRITICAL CURRENT DENSITY IN HIGH QUALITY YBa_2Cu_3O_(7-δ) THIN FILM

机译:高质量YBA_2CU_3O_(7-Δ)薄膜的临界电流密度的各向异性

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We have investigated the transport critical current density J_c as a function of the angle θ between the crystallographic c-axis and the applied magnetic field in high quality YBa_2Cu_3O_(7-δ) thin film. Measurements were performed for various temperature and magnetic field values. Our results show that the critical current density maximum occurs when the applied magnetic field is parallel to the ab planes (θ = 90°).The angular dependence of the critical current density shows the existence of the intrinsic pinning between the CuO_2 layers for H parallel to the ab planes and the extrinsic pinning in the configuration where the magnetic field is parallel to the c-axis. We have analyzed our results in the framework of the intrinsic pinning model proposed by Tachiki and Takahachi.
机译:我们已经研究了传输临界电流密度J_C作为在高质量YBA_2CU_3O_(7-δ)薄膜中的晶体C轴和施加的磁场之间的角度θ的函数。对各种温度和磁场值进行测量。我们的结果表明,当施加的磁场平行于AB平面时发生临界电流密度最大值(θ= 90°)。临界电流密度的角度依赖性显示了与H平行的CUO_2层之间固有钉扎的存在在磁场平行于C轴的配置中的AB平面和外部钉扎。我们已经分析了我们的结果,在Tachiki和Takahachi提出的内在钉扎模型的框架内。

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