Modelling of MSM Photodetectors using RF Measurement Technique

摘要

A multi-giga bits circuit-level model of a thin film metal-semiconductor-metal photodetector (MSM PD) for high speed optical receiver(Rx) was obtained using the RF measurement technique and widely used optimization routines in simulation tool such as ADS and SPICE. On-wafer measurement-based modeling technique was employed to exactly characterize DUTs in this paper. On-wafer calibration standard structures such as NiCr 50 Ω of load, short, and open were also fabricated and optimized using laser trimming for exact measurements. The obtained circuit-level model shows good agreement with measured s-parameters and wide eye open up to 20Gbps.