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Experimental study of electrical breakdown in MEMS devices with micrometer scale gaps

机译:微米刻度隙MEMS器件电气故障的实验研究

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We present an experimental study of the DC breakdown voltage of MEMS interdigitated aluminum electrodes with gaps ranging from 10 to 500 μm. Unlike most research on MEMS electrodes that was done at atmospheric pressure, our work has focused on the effect of gas pressure and gas type on the breakdown voltage. A main goal was to identify geometries that favor the creation of low-voltage discharges. Helium, argon and nitrogen pressure was varied from 10~2 to 8.10~4 Pa (1 to 800 mbar). The breakdown voltage was plotted as a function of the Paschen reduced variable Pred = pd. For higher values of pressure, p or gap, d (high P_(red)), classical Paschen scaling was observed. For lower values of P_(red) however, significant deviations were seen, particularly at low pressures. We attribute these differences not to field emission, but to the scale of the mean free path (which explains the higher than predicted voltages), and principally to the many length scales effectively present in our planar geometry (on-chip and even off-chip, that lead to the superposition of several Paschen curves). Guidelines are proposed for low-pressure operation of MEMS to avoid or to encourage breakdown.
机译:我们介绍了MEMS交叉铝电极的DC击穿电压的实验研究,间隙范围为10至500μm。与大多数在大气压下进行的MEMS电极的大多数研究不同,我们的工作集中在气体压力和气体类型对击穿电压的影响。主要目标是识别有利于建立低压放电的几何形状。氦气,氩气和氮气压力从10〜2至8.10〜4 pa(1至800毫巴)不同。击穿电压作为Paschen降低的可变预热= PD的函数绘制。对于更高的压力值,P或间隙,D(高p_(红色)),观察到经典的paschen缩放。然而,对于P_(红色)的较低值,可以看到显着的偏差,特别是在低压下。我们将这些差异归因于现场发射,而是对平均自由路径的比例(其解释高于预测的电压),并且主要在我们的平面几何体中有效地存在许多长度尺度(片上甚至片外芯片,导致几种Paschen曲线的叠加)。提出了用于MEMS的低压操作以避免或鼓励故障的指南。

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