First Self-Consistent Full-Band 2D Monte Carlo 2D Poisson Device Solver for Modeling SiGe Heterojunction p-Channel Devices

摘要

In this work we are concerned with proper calculation of the valence band-structure of Si and strained SiGe material systems. The hole band-structure is complicated by the strong anisotropy, nonparabolicity and warping of the heavy-hole and light-hole bands. As the spin-orbit splitting is about 44.2 (296) meV in Si (Ge), one also needs to take the split-off band into account to account for inter and intra-band scattering events to model transport properly. Thus, ignoring the contribution of the distant conduction bands in Si, one has to consider at the very minimum six bands (the heavy-hole, the light hole and the split-off bands multiplied by 2 due to spin degeneracy).