Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile

摘要

This work presents the first comprehensive full- band Monte Carlo model for the simulation of silicon/silicon- germanium devices with arbitrary germanium profiles. The model includes a new CPU and memory efficient method for the discretization of the Brillouin zone based on adaptive nonuniform tetrahedral grids and a very efficient method for transfers through heterointerfaces in the case of irregular k-space grids.