Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

摘要

A compact model for the surface and mid-gap potentials of doped symmetric double-gate MOSFETs is presented. A unified regional approach is used to derive the model equations from Poisson equation. The fully-depleted double-gate MOSFET has four regions of operation, accumulation, depletion, weak or volume inversion, and strong inversion. The model is derived physically in all regions, with expressions for the flat-band, fully-depleted, and threshold voltages scalable over silicon channel doping and thickness, and unified to obtain a single-piece explicit model for the surface potential and mid-gap potential. The model has been verified in comparison with numerical device potentials, charges, and capacitances for various channel doping and thickness.