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Linewidth Enhancement Factor of a 1.3μm GaInNAs/GaAs Laser by Optical Gain Analysis

机译：通过光学增益分析为1.3μm增益/ GaAs激光的线宽增强因子

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An experimental determination of the linewidth enhancement factor, α, of a GaInNAs/GaAs laser is presented. The modal gain and Fabry-Perot mode shift with injection current were analysed to derive a value of α=2.8 at threshold for the 1278nm emission.

机译：提出了增益/ GaAs激光的线宽增强因子α的实验确定。分析具有喷射电流的模态增益和法布里 - 珀罗模式偏移，以在1278nm发射的阈值下导出α= 2.8的值。

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《IEEE LEOS Annual Meeting Conference》|2006年||共2页
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X. Zhang; J. A. Gupta; P. J. Barrios; G. Pakulski; T. J. Hall;
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1. Experimental analysis of the optical gain and linewidth enhancement factor of GaInNAs/GaAs lasers [J] . Gerhardt NC, Hofmann MR Journal of Physics. Condensed Matter . 2004,第31期

机译：GaInNAs / GaAs激光器的光学增益和线宽增强因子的实验分析
2. Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers [J] . Alexandropoulos D., Adams MJ. Journal of Physics. Condensed Matter . 2002,第13期

机译：GaInNAs / GaAs应变量子阱激光器的增益，差分增益和线宽增强因子
3. Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3-$muhbox{m}$ InAs;GaAs Quantum-Dot Lasers [J] . Grillot F., Dagens B., Provost J.-G., IEEE Journal of Quantum Electronics . 2008,第10期

机译：1.3- $ muhbox {m} $ InAs; GaAs量子点激光器中的增益压缩和阈值线宽增强因子
4. Linewidth Enhancement Factor of a 1.3μm GaInNAs/GaAs Laser by Optical Gain Analysis [C] . X. Zhang, J. A. Gupta, P. J. Barrios, IEEE LEOS Annual Meeting Conference . 2006

机译：通过光学增益分析为1.3μm增益/ GaAs激光的线宽增强因子
5. Epitaxial structure dependence of gain, refractive index, and linewidth enhancement factor in gallium arsenide and indium gallium arsenide broad-area quantum well lasers. [D] . Stohs, Jonathan. 2000

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8. Linewidth Enhancement Factor and Nonlinear Gain in ZnSe Semiconductor Lasers [R] . Yao, J., Agrawal, G. P., Gallion, P. 1995

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Linewidth Enhancement Factor of a 1.3μm GaInNAs/GaAs Laser by Optical Gain Analysis

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