Half metallic Fe{sub}3O{sub}4 with a fully spin-polarized band structure at the Fermi level is one of the most promising materials for magnetic random access memory (MRAM), which stores data in pseudo spin valve (PSV) or magnetic tunneling junction elements. With advances in fabrication techniques, it is now possible to study the magnetic properties of technologically important systems such as patterned arrays of PSV nanomagnets incorporating highly spin polarized materials like Fe{sub}3O{sub}4. Ordered arrays of such nanostructures provide the basic magnetic architecture required to produce MRAM.
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