Magnetization Reversal Dominated By Domain Wait Pinning In Fept Based Spin Valves

摘要

In this paper, we study FePt/NM/FePt//MgO (NM = Pt or Pd) spin valves with perpendicular magnetization deposited by molecular beam epitaxy. Using extraordinary Hall effect and magnetoresistance, we show that the electrodes can be of different coercivities and magnetically decoupled, with current-in-plane magnetoresistances up to 0.8% at room temperature. Finally, using magnetic force microscopy observations, we prove that the different coercivities of the electrodes are controlled by different magnetization reversals and domain-wall pinning, thus allowing the obtaining of an antiparallel state.