SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL-TYPE MAGNETORESISTIVE EFFECT ELEMENT

摘要

This spin current magnetization rotational magnetoresistance effect element includes a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer in which a direction of magnetization is fixed, a nonmagnetic layer, a second ferromagnetic metal layer configured for a direction of magnetization to be changed, and a cap layer in that order from the substrate side, and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the magnetoresistance effect element and joined to the cap layer, in which the cap layer includes one or more substances having high spin conductivity selected from the group consisting of Cu, Ag, Mg, Al, Si, Ge, and GaAs as a major component.