首页> 外文会议>Intermag Conference >Room Temperature Study of the Magnetic Moment of Ultra-Thin Fe on GaAs(100) and InAs(100)
【24h】

Room Temperature Study of the Magnetic Moment of Ultra-Thin Fe on GaAs(100) and InAs(100)

机译:高薄Fe磁矩的室温研究GaAs(100)和INAS(100)

获取原文

摘要

Due to the need to integrate magnetic materials onto semiconductor (SC) electronics, much of the current research on thin magnetic films focuses on the Fe/GaAs system [1-6]. Fe is an attractive candidate for spin injection because of its high Curie temperature. However, interface morphological and interdiffusion effects of the Fe/SC system are often neglected when considering the magnetic moment of ultra-thin Fe layers. We studied the two systems Fe/GaAs(100) and the closely related Fe/InAs(100) [7,8] to determine the Fe magnetic moment as a function of thickness.
机译:由于需要将磁性材料集成到半导体(SC)电子上,关于薄磁性薄膜的大部分电流研究侧重于Fe / GaAs系统[1-6]。由于其高居里温度,Fe是旋转注射的有吸引力的候选者。然而,在考虑超薄Fe层的磁矩时通常忽略了Fe / SC系统的界面形态和相互扩散效应。我们研究了两个系统Fe / GaAs(100)和密切相关的Fe / InAs(100)[7,8]以确定Fe磁矩作为厚度的函数。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号