QUANTITATIVE CHARACTERIZATION OF NANO-SCALE RESIDUAL STRESSES IN CRYSTALLINE AND GLASSY ELECTRONIC DEVICES PERFORMED INTO THE SCANNING ELECTRON MICROSCOPE

摘要

Electron-stimulated (cathodo)luminescence spectroscopy is quantitatively used for obtaining information about the residual stress fields piled up during manufacturing in electronic devices. This micromechanical information can be added to the microscopic structural/chemical information available in a scanning electron microscope (SEM). Independent of the physical mechanisms behind the luminescence emission, the spectral position of cathodoluminescence (CL) bands observed in both crystalline and glassy materials are shown to possess high stress sensitivity, being thus suitable sensors for residual stress assessments. In this paper, we first quantitatively characterize the stress dependence of typical CL bands observed in ceramic and glass materials. Then, based on this knowledge, applications are shown of two-dimensional residual stress mapping in microstructures and in actual electronic devices.