In Search of Metallic Nanowires on Si(001)

摘要

Electronic structures of several atomic wires of metals like Al, Ga and In on hydrogen passivated Si(001):lxl surface have been examined in search of nanowires with metallic properties. The dihydrogenated Si(001) is patterned by depassivating only one row of Si atoms along the [llO] direction. Various structures of adsorbed metals and their electronic properties have been studied. With our present effort it was observed that Al and Ga ^anowire configurations with metallic property are unstable towards the formation of buckled metal dimers leading to semiconducting behaviour. However, indium atomic wire is close to the metallic limit and shows marginal preference for the formation of symmetric dimers. It is encouraging that In metallic wires on a patterned dihydrogenated Si(001) may be realized.