In this paper we present a comprehensive study of the impact of the Hydrogen (H2) annealing conditions on nano scale silicon fin structures. Hydrogen pressure was varied from 15Torr to 600Torr and anneal temperature was varied from 600°C to 900"C. We" found H2 annealing can cause faceting, corner rounding and smoothing of the etched silicon surfaces. The 1 degree of the fin transformation is a function of both pressure and temperature. Furthermore, low pressure and high temperature enhance the silicon movement and can cause damage to the nano scale fins.
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