Dependence of Microcrystalline Silicon Growth on Ion Flux at the Substrate Surface in a Saddle Field PECVD

摘要

The Saddle-Field Glow Discharge PECVD system emulates RF-like excitation using a semi-transparent anode and a DC power supply.It has been used to deposit high quality amorphous and microcrystalline hydrogenated silicon thin films in the past.The growth of microcrystalline material is particularly sensitive to the conditions under which it is produced.Significant levels of microcrystallinity are only produced under conditions of higher pressure and electrical isolation of the substrate surface from the grounded substrate holder.We present results of a study on the relationship between substrate electrical potential and microcrystalline growth,as quantified by Raman scattering spectroscopy,at growth pressures near the minimum required for microcrystalline growth.