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Radiation-induced optical response of single-crystal and polycrystalline YAG

机译:辐射诱导的单晶和多晶yag的光学响应

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Exposure of optical materials to transient-ionizing-radiation fields can give rise to transient and/or permanent photodarkening effects. In laser materials, such as YAG, such induced optical loss can result in significant degradation of the lasing characteristic of the material, making its selection for optical device applications in radiation environments unfeasible. In the present study, the effects of ionizing radiation on the optical response of undoped and 1.1% Nd-doped single-crystal and polycrystalline YAG have been investigated. In the undoped materials it is seen that both laser materials exhibit significant loss at the 1.06 μm lasing wavelength following exposure to a 40 krad, 30 nsec pulse of gamma radiation. In the undoped single-crystal samples, the transmission loss is initially large but exhibits a rapid recovery. By contrast, the undoped polycrystalline YAG experiences an initial 100% loss in transmission, becoming totally opaque at 1.06 μm following the radiation pulse. This loss is slow to recover and a large residual permanent photodarkening effect is observed. Nd-doping improves the optical response of the materials in that the radiation-induced optical loss is substantially smaller in both the polycrystalline and single-crystal YAG samples. Preliminary results on the radiation response of elevated-temperature samples will also be reported.
机译:光学材料暴露于瞬态电离 - 辐射场可以产生瞬态和/或永久性光电二元效应。在激光材料中,例如YAG,这种诱导的光学损耗可能导致材料的激光特性显着降低,使其在辐射环境中的光学器件应用选择不可行。在本研究中,已经研究了电离辐射对未掺杂和1.1%Nd掺杂单晶和多晶硅的光学响应的​​影响。在未掺杂的材料中,可以看出,在暴露于40krad的40 krad,30nsec脉冲之后,两个激光材料在1.06μm激光波长下表现出显着的损失。在未掺杂的单晶样品中,传输损耗最初是大,但呈现快速恢复。相比之下,未掺杂的多晶YAG经历初始100%的透射损失,在辐射脉冲后的1.06μm处变得完全不透明。这种损失速度缓慢,并且观察到较大的残余永久性光电显示效果。 Nd-掺杂改善了材料的光学响应,因为辐射诱导的光学损耗在多晶硅和单晶YAG样品中基本较小。还将报告对升高温度样品的辐射响应的初步结果。

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