4H-SiC VJFET Based Normally-Off Cascode Switches for 300°C Electronic Applications

摘要

Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature SiC devices for high power/temperature switching. High-voltage VJFETs are typically designed normally-on to ensure voltage control operation at high current-gain. However, to exploit the high voltage/temperature capabilities of VJFETs in a normally-off, high-current, voltage-controlled switch, high-voltage, normally-on and low-voltage, normally-off VJFETs were connected in the cascode configuration. In this paper, we review the high-temperature DC characteristics of VJFETs and 1200 V normally-off cascode switches. The measured parameter shifts in the 25°C to 300°C temperature range are in excellent agreement with theory, confirming fabrication of robust SiC VJFETs and cascode switches.