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Effects of composition on the microstructures and optical properties of hydrogenated amorphous silicon carbide films prepared by electron cyclotron resonance plasma chemical vapor deposition

机译:组成对电子回旋共振等离子体化学气相沉积制备的氢化非晶碳化硅薄膜微观结构和光学性质的影响。

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Hydrogenated amorphous silicon carbide films (a-SiC:H) were prepared from CH_4, SiH_4, and Ar mixtures by Electron Cyclotron Resonance Plasma Chemical Vapor deposition (ECR PCVD). The deposition of the thin films was proceeded with the following optimized conditions; microwave power : 900W, Ar flux : 90sccm, and total flux: 113.4 sccm. The substrate temperature was around 100approx120deg C during deposition. For comparisons, the relative flux ratio of methane to silane was varied to produce thin films of different compositions to investigate the relationships between the associated compositions of films and their corresponding microstructures and optical properties. Moreover, both film's microstructures and their optical properties were analyzed to find out as to how they are interrelated. Furthermore, the surface morphology and amorphous microstructures were confirmed by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM), respectively. And, X-ray Photoelectron Spectroscopy (XPS) was employed to study the relative atomic ratio of C to Si along with the bonding conditions in the thin films. Finally, the Hydrogen concentration and the amounts of C-H and Si-H bonds were determined by Fourier transform infrared spectroscopy(FTIR), while the optical properties were measured by optical spectrophotometer.
机译:通过电子回旋共振等离子体化学气相沉积(ECR PCVD)由CH_4,SiH_4和Ar混合物制备氢化非晶碳化硅膜(a-SiC:H)。薄膜的沉积在以下优化条件下进行;微波功率:900W,氩气通量:90sccm,总通量:113.4sccm。在沉积过程中,衬底温度约为100〜120℃左右。为了进行比较,改变甲烷与硅烷的相对通量比以产生具有不同组成的薄膜,以研究膜的相关组成与其相应的微结构和光学性质之间的关系。此外,还对薄膜的微观结构及其光学特性进行了分析,以找出它们之间的相互关系。此外,分别通过扫描电子显微镜(SEM)和透射电子显微镜(TEM)确认了表面形态和无定形微观结构。并且,使用X射线光电子能谱(XPS)研究了C与Si的相对原子比以及薄膜中的键合条件。最后,通过傅里叶变换红外光谱仪(FTIR)测定氢的浓度以及C-H和Si-H键的数量,同时用分光光度计测定其光学性质。

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